Determination of deep-level energy and density profiles in inhomogeneous semiconductors
- 1 August 1973
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 23 (3), 150-151
- https://doi.org/10.1063/1.1654839
Abstract
A method is proposed for the determination of deep impurity levels and density profiles from C–V measurements and is demonstrated on GaAs Schottky barrier diodes. The technique involves measurements of the time dependence of the bias voltage instead of the barrier capacitance. The spatial distribution of a deep level is observed to exhibit a peak at the boundary between an epitaxial layer and the semi‐insulating substrate. This deep center is located 0.8 eV below the conduction band.Keywords
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