Continuous-wave Operation of AlGaN-cladding-free Nonpolar m-Plane InGaN/GaN Laser Diodes
- 1 August 2007
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 46 (8L), L761
- https://doi.org/10.1143/jjap.46.l761
Abstract
We demonstrate continuous-wave (CW) operation of nonpolar m-plane InGaN/GaN laser diodes without Al-containing waveguide cladding layers. Thick InGaN quantum wells (QWs) are used to generate effective transverse optical mode confinement, eliminating the need for Al-containing waveguide cladding layers. Peak output powers of more than 25 mW are demonstrated with threshold current densities and voltages of 6.8 kA/cm2 and 5.6 V, respectively. The unpackaged and uncoated laser diodes operated under CW conditions for more than 15 h.Keywords
This publication has 13 references indexed in Scilit:
- AlGaN-Cladding-Free Nonpolar InGaN/GaN Laser DiodesJapanese Journal of Applied Physics, 2007
- Demonstration of Nonpolar m-Plane InGaN/GaN Laser DiodesJapanese Journal of Applied Physics, 2007
- Continuous-Wave Operation of m-Plane InGaN Multiple Quantum Well Laser DiodesJapanese Journal of Applied Physics, 2007
- High Power and High External Efficiency m-Plane InGaN Light Emitting DiodesJapanese Journal of Applied Physics, 2007
- Recent progress in high-power blue-violet lasersIEEE Journal of Selected Topics in Quantum Electronics, 2003
- Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structuresApplied Physics Letters, 1999
- Reduction of oscillator strength due to piezoelectric fields in quantum wellsPhysical Review B, 1998
- Spontaneous polarization and piezoelectric constants of III-V nitridesPhysical Review B, 1997
- Spontaneous emission of localized excitons in InGaN single and multiquantum well structuresApplied Physics Letters, 1996
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996