Resonance effects observed at the onset of Fowler-Nordheim tunneling in thin MOS structures
- 31 May 1975
- journal article
- Published by Elsevier BV in Solid-State Electronics
- Vol. 18 (5), 449-451
- https://doi.org/10.1016/0038-1101(75)90047-7
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Saturation capacitance of thin oxide MOS structures and the effective surface density of states of siliconSolid-State Electronics, 1974
- Field Ionization near Nonuniform Metal SurfacesThe Journal of Chemical Physics, 1967
- Zur berechnung des tunnelstroms durch eine trapezförmige potentialstufeSolid-State Electronics, 1966