Two-step growth of ZnO films on silicon by atomic layer deposition
- 1 March 2005
- journal article
- Published by Springer Science and Business Media LLC in Korean Journal of Chemical Engineering
- Vol. 22 (2), 334-338
- https://doi.org/10.1007/bf02701506
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Growth mechanism of needle-shaped ZnO nanostructures over NiO-coated Si substratesKorean Journal of Chemical Engineering, 2004
- Homo-buffer layer effects and single crystalline ZnO hetero-epitaxy on c-plane sapphire by a conventional RF magnetron sputteringJournal of Crystal Growth, 2004
- Quality improvement of ZnO layer on LT-grown ZnO layer/Si(111) through a two-step growth using an RF magnetron sputteringJournal of Crystal Growth, 2004
- Effects of ZnO buffer layer thickness on properties of ZnO thin films deposited by radio-frequency magnetron sputteringApplied Surface Science, 2003
- Investigation of ZnO epilayers grown under various Zn/O ratios by plasma-assisted molecular-beam epitaxyJournal of Applied Physics, 2002
- Growth of high quality ZnO thin films at low temperature on Si(100) substrates by plasma enhanced chemical vapor depositionJournal of Vacuum Science & Technology A, 2002
- Analysis of a transient region during the initial stage of atomic layer depositionJournal of Applied Physics, 2000
- Role of ZnS buffer layers in growth of zincblende ZnO on GaAs substrates by metalorganic molecular-beam epitaxyJournal of Crystal Growth, 2000
- Layer-by-layer growth of ZnO epilayer on Al2O3(0001) by using a MgO buffer layerApplied Physics Letters, 2000
- Influences of initial nitridation and buffer layer deposition on the morphology of a (0001) GaN layer grown on sapphire substratesJournal of Applied Physics, 1998