Electron Mobility in II-VI Semiconductors
- 15 November 1970
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 2 (10), 4036-4044
- https://doi.org/10.1103/physrevb.2.4036
Abstract
The electron drift mobility in CdS, CdSe, CdTe, ZnS, ZnSe, and ZnTe is calculated by an iterative solution of the Boltzmann equation for lattice scattering. Piezoelectric, deformation-potential acoustic-mode, and polar-mode scattering are included. The acoustic deformation potential appropriate to acoustic-mode scattering appears to be much higher than previously expected.Keywords
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