Monte Carlo simulations of AlGaN/GaN heterojunction field-effect transistors (HFETs)
- 22 March 2002
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 14 (13), 3479-3497
- https://doi.org/10.1088/0953-8984/14/13/307
Abstract
Self-consistent Monte Carlo simulations are reported for AlGaN/GaN HFETs. Hot-carrier scattering rates are determined by fitting experimental ionization coefficients and the doping character of the GaN is obtained from substrate bias measurements. Preliminary simulations for a simple model of the AlGaN surface are described and results are found to be consistent with experimental data. The high-frequency response of short-gate-length transistors is found to be sensitive to the charge state of the free AlGaN surface and it is proposed that current-slump phenomena may also be related to deep levels at this surface. Breakdown calculations show interesting two-dimensional effects close to the drain contact.Keywords
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