Carrier dependence of the radiative coefficient in III-V semiconductor light sources
- 15 April 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (8), 732-734
- https://doi.org/10.1063/1.94898
Abstract
In this letter the carrier dependence of the radiative bimolecular coefficients obtained from differential carrier lifetime measurements is reported. The bimolecular coefficient B(n) decreases significantly with carrier density. It is found that B(n) is well approximated by B(n)≂B0−B1n, with B1/B0=(1.1±0.2)×10−19 cm3 for GaAlAs and (1.6±0.2)×10−19 cm3 for 1.3 μm InGaAsP. This effect has a strong influence on the spontaneous emission efficiency in both InGaAsP and GaAlAs light sources.Keywords
This publication has 8 references indexed in Scilit:
- Threshold temperature dependence of subnanosecond optically excited 1.3-μm InGaAsP lasersApplied Physics Letters, 1984
- Measurements of threshold carrier density of III-V semiconductor laser diodesApplied Physics Letters, 1983
- Minority carrier lifetime and luminescence efficiency of 1.3 µm InGaAsP-InP double heterostructure layersIEEE Journal of Quantum Electronics, 1983
- Measurement of radiative and auger recombination rates in p-type InGaAsP diode lasersElectronics Letters, 1982
- Light-current characteristics of InGaAsP light emitting diodesApplied Physics Letters, 1981
- Band-to-band Auger recombination in InGaAsP lasersApplied Physics Letters, 1981
- Nonradiative recombination in InGaAsP/InP light sources causing light emitting diode output saturation and strong laser-threshold-current temperature sensitivityApplied Physics Letters, 1981
- Calculated spectral dependence of gain in excited GaAsJournal of Applied Physics, 1976