Transport properties of InN nanowires

Abstract

The transport properties of single InN nanowires grown by thermal catalytic chemical vapor deposition were measured as a function of both length/square of radius ratio and temperature. The resistivity of the $n$ -type InN nanowires with diameter $>100\mathrm{nm}$ was measured by the transmission line method and the value was on the order of $4\times {10}^{-4}\Omega \mathrm{cm}$ . The specific contact resistivity for unalloyed $\mathrm{Pd}∕\mathrm{Ti}∕\mathrm{Pt}∕\mathrm{Au}$ ohmic contacts was near $1.09\times {10}^{-7}\Omega {\mathrm{cm}}^2$ . The temperature dependence of resistance showed a positive temperature coefficient and a functional form characteristic of metallic conduction in the InN.