Mercuric telluride was synthesized and single crystals were prepared both in a horizontal capsule and by the Bridgman technique. The Hall coefficient R and the resistivity ρ were measured as a function of temperature and magnetic field. Above 250°K the material was intrinsic with an energy gap of around 0.02 ev and a mean density‐of‐states effective carrier mass of about 0.04 . Hall effect and mangetoresistance data indicated that at 300°K while . In the intrinsic temperature range, mobilities decreased with increasing temperature.