P-N-I-P and N-P-I-N Junction Transistor Triodes
- 1 May 1954
- journal article
- website
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Bell System Technical Journal
- Vol. 33 (3), 517-533
- https://doi.org/10.1002/j.1538-7305.1954.tb02355.x
Abstract
Theory indicates that the useful frequency range of junction transistor riodes may be extended by a factor of ten by a new structure, the p-n-i-p, which uses a thick collector depletion layer of intrinsic (i-type) semiconductor to reduce greatly the ...Keywords
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