Growth of silicon carbide: process-related defects
- 1 December 2001
- journal article
- Published by Elsevier BV in Applied Surface Science
- Vol. 184 (1-4), 27-36
- https://doi.org/10.1016/s0169-4332(01)00472-x
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Polytype stability in seeded sublimation growth of 4H–SiC boulesJournal of Crystal Growth, 2000
- High Growth Rate Epitaxy of Thick 4H-SiC LayersMaterials Science Forum, 2000
- Morphology and polytype disturbances in sublimation growth of SiC epitaxial layersJournal of Crystal Growth, 1999
- Growth of Thick Epitaxial 4H-SiC Layers by Chemical Vapor DepositionMaterials Science Forum, 1998
- Growth-related structural defects in seeded sublimation-grown SiCDiamond and Related Materials, 1997
- Micropipes: Hollow Tubes in Silicon Carbidephysica status solidi (a), 1997
- The mechanism for cubic SiC formation on off-oriented substratesJournal of Crystal Growth, 1997
- Progress in silicon carbide semiconductor electronics technologyJournal of Electronic Materials, 1995
- Performance limiting micropipe defects in silicon carbide wafersIEEE Electron Device Letters, 1994
- Capillary equilibria of dislocated crystalsActa Crystallographica, 1951