Low-threshold proton-implanted 1.3-μm vertical-cavity top-surface-emitting lasers with dielectric and wafer-bonded GaAs-AlAs Bragg mirrors
- 1 July 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 9 (7), 866-868
- https://doi.org/10.1109/68.593326
Abstract
We demonstrate a new structure for long-wavelength (1.3-/spl mu/m) vertical-cavity top-surface-emitting lasers using proton implantation for current confinement. Wafer bonded GaAs-AlAs Bragg mirrors and dielectric mirrors are used for bottom and top mirrors, respectively. The gain medium of the lasers consists of nine strain-compensated AlGaInAs quantum wells. A record low room temperature pulsed threshold current density of 1.13 kA/cm/sup 2/ has been achieved for 15-/spl mu/m diameter devices with a threshold current of 2 mA. The side-mode-suppression-ratio is greater than 35 dB.Keywords
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