Valence Band Structure of Silicon
- 1 November 1958
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 1 (9), 313-315
- https://doi.org/10.1103/physrevlett.1.313
Abstract
DOI: https://doi.org/10.1103/PhysRevLett.1.313Keywords
This publication has 13 references indexed in Scilit:
- Infrared Absorption of Photogenerated Free Carriers in GermaniumPhysical Review Letters, 1958
- Emission und Absorption langwelliger Ultrarotstrahlung von Germanium im photoleitenden ZustandZeitschrift für Naturforschung A, 1958
- Determination of Optical Constants and Carrier Effective Mass of SemiconductorsPhysical Review B, 1957
- Cyclotron Resonance Experiments in Silicon and GermaniumPhysical Review B, 1956
- Cyclotron Resonance of Electrons and Holes in Silicon and Germanium CrystalsPhysical Review B, 1955
- Some recent developments in the calculation of crystal energy bands — new results for the germanium crystalPhysica, 1954
- Optical Studies of Injected Carriers. III. Infrared Absorption in Germanium at Low TemperaturesPhysical Review B, 1954
- Infrared Absorption in-Type GermaniumPhysical Review B, 1953
- Absorption of Infrared Light by Free Carriers in GermaniumPhysical Review B, 1953
- New Infrared Absorption Bands in-Type GermaniumPhysical Review B, 1952