Capacitance studies on amorphous silicon Schottky barrier diodes
- 29 February 1980
- journal article
- Published by Elsevier BV in Journal of Non-Crystalline Solids
- Vol. 35-36, 587-592
- https://doi.org/10.1016/0022-3093(80)90658-4
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- An investigation of the amorphous-silicon barrier and p-n junctionPhilosophical Magazine Part B, 1978
- Surface states and barrier heights of metal-amorphous silicon schottky barriersSolid State Communications, 1977
- Electronic properties of amorphous silicon in solar cell operationIEEE Transactions on Electron Devices, 1977
- Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodesJournal of Physics D: Applied Physics, 1971
- MOS CONDUCTANCE TECHNIQUE FOR MEASURING SURFACE STATE PARAMETERSApplied Physics Letters, 1965