Characterization of excess carbon in cubic SiC films by infrared absorption
- 15 March 1999
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 85 (6), 3377-3379
- https://doi.org/10.1063/1.369686
Abstract
The behavior of excess carbon in cubic SiC films was investigated using infrared absorption spectroscopy of modes which were optically activated by defect-induced strain in the film. The results show that the excess carbon which is formed interstitially in the region of SiC grain boundaries as an interstitial phase, consists of both crystalline and amorphous phases. The crystalline phase declines and the amorphous phase grows when the growth temperature is increased above 700 °C.Keywords
This publication has 17 references indexed in Scilit:
- Plasma Etch Void Formed at the SiC Film/Si Substrate InterfaceJapanese Journal of Applied Physics, 1998
- Characterization of 3C-SiC films grown on monocrystalline Si by reactive hydrogen plasma sputteringJournal of Applied Physics, 1997
- Characterization of amorphous carbon thin filmsJournal of Vacuum Science & Technology A, 1996
- Characteristics of diamond-like carbon films formed by a hybrid laser-plasma ablation of graphiteMaterials Science and Engineering B, 1992
- Analysis of the composite structures in diamond thin films by Raman spectroscopyPhysical Review B, 1990
- Characterization of diamond films by Raman spectroscopyJournal of Materials Research, 1989
- Amorphous carbonAdvances in Physics, 1986
- Raman spectra of diamond at high pressuresPhysical Review B, 1985
- Preparation of sp3-Rich Amorphous Carbon Film by Hydrogen Gas Reactive RF-Sputtering of Graphite, and Its PropertiesJapanese Journal of Applied Physics, 1984
- Raman spectra of amorphous SiCSolid State Communications, 1983