Large area GaN substrates
- 1 December 1999
- journal article
- Published by Elsevier BV in Materials Science and Engineering B
- Vol. 66 (1-3), 26-29
- https://doi.org/10.1016/s0921-5107(99)00114-2
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layerApplied Physics Letters, 1986