Heating-induced carrier accumulation in the optical confinement layer and the output power in broadened symmetric and narrow asymmetric waveguide laser diodes

Abstract

We analyze the thermal effects in carrier accumulation (leakage) in the optical confinement layer of high-power $\lambda =1.06\mu \mathrm{m}$ semiconductor lasers. The experimental data for the symmetric broadened-cavity lasers are analyzed to extract the information on the current dependence of the internal loss and laser temperature. These data are used to predict the thermal behavior and output power-current dependence of a proposed asymmetric nonbroadened construction operating at the same wavelength, and a significant improvement is predicted.