CURRENT-VOLTAGE CHARACTERISTICS OF LARGE DOUBLE INJECTION IN Si p-i-n STRUCTURES
- 15 February 1964
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 4 (4), 65-66
- https://doi.org/10.1063/1.1753964
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Characteristics of p-i-n Junctions Produced by Ion-Drift Techniques in SiliconJournal of Applied Physics, 1962
- Volume-Controlled, Two-Carrier Currents in Solids: The Injected Plasma CasePhysical Review B, 1961
- Ion Drift in an n-p JunctionJournal of Applied Physics, 1960
- Electrical Properties of Silicon Containing Arsenic and BoronPhysical Review B, 1954