Bonding of nitride based LEDs on tin oxide templates for advanced optoelectronic devices
- 1 January 2011
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 47 (9), 556-558
- https://doi.org/10.1049/el.2011.0514
Abstract
A process for fabrication of flip chip LEDs based on SnO2-GaN wafer bonding is reported. Typical LED characteristics have been measured and no detrimental effect of the bonding interface has been observed. The forward voltage at 20 mA is 3.96 V and differential resistance at 100 mA is as low as 16 Ω.Keywords
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