Temperature dependence of apparent threshold voltage of silicon MOS transistors at cryogenic temperatures

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1 June 1968

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 15 (6), 362-368
https://doi.org/10.1109/t-ed.1968.16191

Abstract

Measurements of apparent threshold voltages for conduction of bothn-p-nandp-n-pMOS-

Keywords

Cited by 7 articles