A Two-Step, Lightly Nitrided Gate Oxidation Process For Sub-0.5 μm Cmos Technology
- 1 January 1996
- journal article
- Published by Springer Science and Business Media LLC in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Furnace grown gate oxynitride using nitric oxide (NO)IEEE Transactions on Electron Devices, 1994
- Compound Sidewall Spacer Technology for Submicron MosfetMRS Proceedings, 1992
- Synthesis of High-Quality Ultra-Thin Gate Oxides for ULSI ApplicationsAT&T Technical Journal, 1988