Ultraviolet-Enhanced Oxidation of Silicon
- 1 February 1971
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 42 (2), 752-756
- https://doi.org/10.1063/1.1660091
Abstract
This paper describes the results of dry thermal oxidation of silicon under uv‐irradiation conditions. A model is proposed to explain the enhanced oxidation and reduced surface‐state charge density that occur under these conditions.Keywords
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