Retardation of Sb Diffusion in Si during Thermal Oxidation
- 1 April 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (4), 739-744
- https://doi.org/10.1143/jjap.20.739
Abstract
Investigation of Sb diffusion in Si during thermal oxidation using LOCOS (LOCal Oxidation of Silicon) shows that diffusion of Sb in Si is retarded during thermal oxidation. This suggests that the diffusion mechanism of Sb differs from those of B and P, which diffuse faster during thermal oxidation. A model which can explain both enhanced and retarded diffusion of impurities in Si during oxidation is proposed. The model assumes that B and P diffuse only by interstitials, Sb diffuses only by vacancies and As diffuses by both vacancies and interstitials.Keywords
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