Highly Uniform Alx Ga1−x As Double-Heterostructure Lasers and Their Characteristics at Room Temperature

Abstract

Highly uniform double‐heterostructure wafers were grown reproducibly by liquid‐phase epitaxy. Thresholds and efficiencies lie within 5% for different lasers from a given wafer. Studies of the effect of dopants in the active region of lasers made from these uniform wafers showed clearly the dependence of gain and loss characteristics upon some doping parameters. External differential quantum efficiencies of 50% were obtained consistently. Peak pulse power of 6 W and cw power of 200 mW were achieved with Fabry‐Perot diodes.