Interface engineering for enhanced electron mobilities in W/HfO/sub 2/ gate stacks
- 19 April 2005
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Effective Electron Mobility Reduced by Remote Charge Scattering in High-κ Gate StacksJapanese Journal of Applied Physics, 2002
- Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scatteringJournal of Applied Physics, 2001