High-power single-mode AlGaAs lasers with bent-waveguide nonabsorbing etched mirrors
- 15 September 1992
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 72 (6), 2131-2135
- https://doi.org/10.1063/1.351601
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Local mirror temperatures of red-emitting (Al)GaInP quantum-well laser diodes by Raman scattering and reflectance modulation measurementsApplied Physics Letters, 1992
- Very high-power (425 mW) AlGaAs SQW-GRINSCH ridge laser with frequency-doubled output (41 mW at 428 nm)IEEE Journal of Quantum Electronics, 1991
- Full-wafer technology-A new approach to large-scale laser fabrication and integrationIEEE Journal of Quantum Electronics, 1991
- An AlGaAs laser with high-quality dry etched mirrors fabricated using an ultrahigh vacuum in situ dry etching and deposition processing systemIEEE Journal of Quantum Electronics, 1988
- Bidirectional beam propagation methodElectronics Letters, 1988
- A novel high-power laser structure with current-blocked regions near cavity facetsIEEE Journal of Quantum Electronics, 1987
- High-power GaAlAs window lasersElectronics Letters, 1986
- New programmable switched-capacitor filterElectronics Letters, 1986
- AlGaAs/GaAs Buried Multiquantum Well Lasers with a Reactive Ion Etched Window FacetJapanese Journal of Applied Physics, 1985
- High optical power density emission from a ’’window-stripe’’ AlGaAs double-heterostructure laserApplied Physics Letters, 1979