Mapping of crystal defects and the minority carrier diffusion length in 6H–SiC using a novel electron beam induced current technique
- 1 October 1998
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 84 (7), 3986-3992
- https://doi.org/10.1063/1.368578
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- A critical review of ohmic and rectifying contacts for silicon carbideMaterials Science and Engineering B, 1995
- A direct method for the extraction of diffusion length and surface recombination velocity from an EBIC line scan: planar junction configurationIEEE Transactions on Electron Devices, 1995
- Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologiesJournal of Applied Physics, 1994
- Measurement of n-type dry thermally oxidized 6H-SiC metal-oxide-semiconductor diodes by quasistatic and high-frequency capacitance versus voltage and capacitance transient techniquesJournal of Applied Physics, 1994
- Electrical properties of epitaxial 3C- and 6H-SiC p-n junction diodes produced side-by-side on 6H-SiC substratesIEEE Transactions on Electron Devices, 1994
- Silicon carbide UV photodiodesIEEE Transactions on Electron Devices, 1993
- Growth of improved quality 3C-SiC films on 6H-SiC substratesApplied Physics Letters, 1990
- Calculation of the electron-beam-induced current (EBIC) at a Schottky contact and comparison with Au/n-Ge diodesPhilosophical Magazine Part B, 1989
- Investigation of minority-carrier diffusion lengths by electron bombardment of Schottky barriersJournal of Applied Physics, 1978
- Bandgap Dependence and Related Features of Radiation Ionization Energies in SemiconductorsJournal of Applied Physics, 1968