Lasing action of Ga0.67In0.33As/GaInAsP/InP tensile-strained quantum-box laser
- 20 January 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (2), 142-143
- https://doi.org/10.1049/el:19940082
Abstract
The lasing action of a Ga0.67In0.33As/GaInAsP/InP quantum-box (QB) laser with single-layer tensile-strained (TS)-QB active region is demonstrated for the first time. The fabricated QB is 30nm in diameter and 12nm thick with a period of 70nm. The sample was fabricated by using two-step MOVPE growth, electron-beam-exposure (EBX) direct writing, and wet-chemical etching processes. The threshold current density was 7.6KA/cm2 at 77K with pulse current injection.Keywords
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