Broadening Mechanism of Resistive Transition under Magnetic Field in Single Crystalline (La1-xSrx)2CuO4
- 1 April 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (4A), L555
- https://doi.org/10.1143/jjap.28.l555
Abstract
The resistive transitions near the superconducting critical temperature were measured under magnetic field up to 5 T on a FZ-grown high-quality single crystal (La0.93Sr0.07)2CuO4 (T c=37.5 K) The crystal was sufficiently large along the c-axis that the dc four-probe method could be applied along this axis as well as along the usual a-b plane. It was found that the width of the temperature region over which the resistive transition is broadened depends only on the relative orientation between the magnetic field and the crystalline c-axis, but not on that between the field and the current. It indicates that the mechanisms based on the fluxoid motion, such as the flux creep model, the Kosterlitz-Thouless transition model and the superconducting glassy state model, are unlikely to explain the broadening of the resistive transition under magnetic fields in (La1-x Sr x )2CuO4.Keywords
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