Electron spin resonance observation of trapped electron centers in atomic-layer-deposited hafnium oxide on Si
- 20 October 2003
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (16), 3407-3409
- https://doi.org/10.1063/1.1621078
Abstract
We observed two paramagnetic defects in thin films of HfO 2 on silicon with electron spin resonance. Both appear after photoinjecting electrons into the dielectric. Strong spectroscopic evidence links one spectrum to an O 2 − defect. A second spectrum is likely due to an Hf +3 related defect.Keywords
This publication has 22 references indexed in Scilit:
- Charge trapping in high k gate dielectric stacksPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Electrical properties of HfO2 deposited via atomic layer deposition using Hf(NO3)4 and H2OApplied Physics Letters, 2003
- Atomic layer deposition of thin hafnium oxide films using a carbon free precursorJournal of Applied Physics, 2003
- Charge trapping in ultrathin hafnium oxideIEEE Electron Device Letters, 2002
- The radiation response of the high dielectric-constant hafnium oxide/silicon systemIEEE Transactions on Nuclear Science, 2002
- Dielectric property and thermal stability of HfO2 on siliconApplied Physics Letters, 2002
- Thermodynamic stability of high-K dielectric metal oxides ZrO2 and HfO2 in contact with Si and SiO2Applied Physics Letters, 2002
- What can electron paramagnetic resonance tell us about the Si/SiO2 system?Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998
- Electron spin resonance study of interface states induced by electron injection in metal-oxide-semiconductor devicesJournal of Applied Physics, 1986
- ESR studies of 0−2 adsorbed on Ti supported surfaces: Analysis of motional dynamicsThe Journal of Chemical Physics, 1981