Pulse Height Defect and Energy Dispersion in Semiconductor Detectors
- 1 February 1966
- journal article
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 37 (2), 190-194
- https://doi.org/10.1063/1.1720127
Abstract
We have calculated the contributions of the atomic (screened Coulombic) scattering process to the pulse height defect and energy dispersion observed when heavy ions expend their energies in semiconductor detectors. Atomic scattering appears to account qualitatively for the pulse height defect observed for most heavy ions in both silicon and germanium detectors. Atomic scattering also contributes substantially to the energy dispersion.Keywords
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