Secondary ion mass spectrometry study of e x s i t u annealing of epitaxial GaAs grown on Si substrates
- 29 February 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (9), 731-732
- https://doi.org/10.1063/1.99362
Abstract
Samples of epitaxial GaAs grown on (100) Si substrates using molecular beam epitaxy were annealed at four different temperatures, from 800 to 950 °C. Following annealing, the samples were analyzed using secondary ion mass spectrometry. Depth profiles of Ga, As, and Si reveal optimum conditions for annealing, and place a lower limit on a damage threshold for GaAs/Si substrates.Keywords
This publication has 6 references indexed in Scilit:
- Defect structures at the GaAs/Si interface after annealingApplied Physics Letters, 1987
- Effect of i n s i t u and e x s i t u annealing on dislocations in GaAs on Si substratesApplied Physics Letters, 1987
- Significant improvement in crystalline quality of molecular beam epitaxially grown GaAs on Si (100) by rapid thermal annealingApplied Physics Letters, 1986
- Material properties of high-quality GaAs epitaxial layers grown on Si substratesJournal of Applied Physics, 1986
- Monolithic integration of GaAs/AlGaAs double-heterostructure LED's and Si MOSFET'sIEEE Electron Device Letters, 1986
- Defects in epitaxial multilayersJournal of Crystal Growth, 1976