Flux Dependence of Damage Accumulation in Silicon during Ion Bombardment
- 16 December 1986
- journal article
- research article
- Published by Wiley in physica status solidi (a)
- Vol. 98 (2), 527-534
- https://doi.org/10.1002/pssa.2210980225
Abstract
No abstract availableKeywords
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- Ion implantation in semiconductors—Part II: Damage production and annealingProceedings of the IEEE, 1972
- Ionization, thermal, and flux dependences of implantation disorder in siliconRadiation Effects, 1971
- Electrically active defect annealing in neutron and in ion-damaged SiRadiation Effects, 1970
- A model for the formation of amorphous Si by ion bombardmentRadiation Effects, 1970