Properties of silicon and aluminum oxide thin films deposited by dual ion beam sputtering

Abstract

Silicon dioxide and aluminum oxide thin films have been deposited by dual ion beam sputtering. Their properties have been investigated in order to point out the advantages of this technique. A bombardment of growing films has been performed by an Ar++O+2 ion beam with different energy and current values. The obtained films have correct stoichiometry, high density, and good mechanical properties.