One-band density of states for the Polk model for amorphous tetrahedrally bonded semiconductors

Abstract
The one-band density of states for the Polk model for amorphous semiconductors is found by direct diagonalization for a 201-atom structure and some smaller structures. It is seen that the density of states has a definite two-peaked character. Implications for the lower half of the valence band and the middle portion of the vibrational density of states in amorphous silicon and germanium are discussed.