Measurement of the barrier height of a multiple quantum barrier (MQB)
- 1 January 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 30 (12), 2781-2789
- https://doi.org/10.1109/3.362732
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- 630 nm-band AlGaInP strained MQW laser diodes with an MQB grown on misoriented substratesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Characteristics of 680 nm-visible laser diode with MQB grown by MOCVDPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Drift leakage current in AlGaInP quantum-well lasersIEEE Journal of Quantum Electronics, 1993
- High-Efficiency InGaAlP Visible Light-Emitting DiodesJapanese Journal of Applied Physics, 1992
- High-Power InGaAlP Laser Diodes for High-Density Optical RecordingJapanese Journal of Applied Physics, 1992
- Enhanced carrier confinement effect by the multiquantum barrier in 660 nm GaInP/AlInP visible lasersApplied Physics Letters, 1991
- Optical properties of AlxGa1−x AsJournal of Applied Physics, 1986
- Molecular beam epitaxial growth of InGaAlP visible laser diodes operating at 0.66–0.68 μm at room temperaturesJournal of Applied Physics, 1983
- Room-temperature threshold-current dependence of GaAs-AlxGa1−xAs double-heterostructure lasers on x and active-layer thicknessJournal of Applied Physics, 1978
- Photon-Radiative Recombination of Electrons and Holes in GermaniumPhysical Review B, 1954