Stresses and strains in epilayers, stripes and quantum structures of III - V compound semiconductors
- 1 May 1996
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 11 (5), 641-671
- https://doi.org/10.1088/0268-1242/11/5/004
Abstract
No abstract availableKeywords
This publication has 129 references indexed in Scilit:
- On the theory of thermal stresses in a thin film on a ceramic substrateJournal of Applied Physics, 1994
- Misfit dislocation distributions in capped (buried) strained semiconductor layersJournal of Applied Physics, 1993
- Dimensionality and critical sizes of GeSi on Si(100)Thin Solid Films, 1992
- Theoretical comparison of the stability characteristics of capped and uncapped GexSi1−x strained epilayersSolid-State Electronics, 1992
- A new study of critical layer thickness, stability and strain relaxation in pseudomorphic gexsi1-xstrained epilayersPhilosophical Magazine A, 1992
- Strain relaxation in GeSi layers with uniform and graded compositionMicroelectronic Engineering, 1991
- Low-temperature metalorganic chemical vapor deposition of InP on Si(001)Applied Physics Letters, 1991
- Realization of low defect density, ultrathick, strained InGaAs/GaAs multiple quantum well structures via growth on patterned GaAs (100) substratesApplied Physics Letters, 1990
- Stress relief in patterned GaAs grown on mismatched substratesJournal of Crystal Growth, 1989
- Energy band-gap shift with elastic strain in GaxIn1−xP epitaxial layers on (001) GaAs substratesJournal of Applied Physics, 1983