Patterned p-Doping of InAs Nanowires by Gas-Phase Surface Diffusion of Zn
- 4 January 2010
- journal article
- research article
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 10 (2), 509-513
- https://doi.org/10.1021/nl903322s
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Nanoscale doping of InAs via sulfur monolayersApplied Physics Letters, 2009
- Development of a Vertical Wrap-Gated InAs FETIEEE Transactions on Electron Devices, 2008
- Nanowire Transistor Performance Limits and ApplicationsIEEE Transactions on Electron Devices, 2008
- Toward Nanowire ElectronicsIEEE Transactions on Electron Devices, 2008
- Formation and Characterization of NixInAs/InAs Nanowire Heterostructures by Solid Source ReactionNano Letters, 2008
- High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mmIEEE Electron Device Letters, 2008
- Vertical Enhancement-Mode InAs Nanowire Field-Effect Transistor With 50-nm Wrap GateIEEE Electron Device Letters, 2008
- Remote p-Doping of InAs NanowiresNano Letters, 2007
- Ambipolar conduction in transistors using solution grown InAs nanowires with Cd dopingApplied Physics Letters, 2007
- In Search of “Forever,” Continued Transistor Scaling One New Material at a TimeIEEE Transactions on Semiconductor Manufacturing, 2005