p–n junctions in the surface region of silicon obtained by evaporation of silicon in ultrahigh vacuum
- 16 February 1978
- journal article
- research article
- Published by Wiley in physica status solidi (a)
- Vol. 45 (2), 521-527
- https://doi.org/10.1002/pssa.2210450220
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Epitaxial germanium–silicon structures obtained in ultrahigh vacuumphysica status solidi (a), 1976
- A technique for directly plotting the doping profile of semiconductor wafers (“8-shaped way”)Solid-State Electronics, 1976
- Carbide Contamination of Silicon SurfacesJournal of Applied Physics, 1971
- Contaminants on chemically etched silicon surfaces: LEED-Auger methodSurface Science, 1970
- p Layers on Vacuum Heated SiliconJournal of Applied Physics, 1960