Growth of Device Quality 4H-SiC High Velocity Epitaxy
- 1 June 2004
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 457-460, 201-204
- https://doi.org/10.4028/www.scientific.net/msf.457-460.201
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Structural improvement in sublimation epitaxy of 4H–SiCJournal of Applied Physics, 2000
- High Growth Rate Epitaxy of Thick 4H-SiC LayersMaterials Science Forum, 2000
- Growth of Thick Epitaxial 4H-SiC Layers by Chemical Vapor DepositionMaterials Science Forum, 1998