Characterization of FaAs epitaxial layers by low pressure MOVPE using TEG as Ga source
- 31 October 1981
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 55 (1), 24-29
- https://doi.org/10.1016/0022-0248(81)90266-9
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Analysis of the Main Factors Influencing the Thickness Uniformity of VPE GaAs Thin LayersJournal of the Electrochemical Society, 1980
- Increase in luminescence efficiency of AlxGa1−xAs grown by organometallic VPEApplied Physics Letters, 1979
- A new method for the growth of GaAs epilayer at low H2 pressureJournal of Crystal Growth, 1978
- Kinetics of Silicon Growth under Low Hydrogen PressureJournal of the Electrochemical Society, 1978
- Device quality epitaxial gallium arsenide grown by the metal alkyl-hydride techniqueJournal of Crystal Growth, 1975
- Properties of Epitaxial GaAs Layers from a Triethyl Gallium and Arsine SystemJournal of the Electrochemical Society, 1975
- Properties of Epitaxial Gallium Arsenide from Trimethylgallium and ArsineJournal of the Electrochemical Society, 1973
- Heteroepitaxial GaAs on Aluminum Oxide: Electrical Properties of Undoped FilmsJournal of Applied Physics, 1971
- Epitaxial Gallium Arsenide from Trimethyl Gallium and ArsineJournal of the Electrochemical Society, 1969
- SINGLE-CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATESApplied Physics Letters, 1968