4H-SiC normally-off vertical junction field-effect transistor with high current density
- 4 August 2003
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 24 (7), 463-465
- https://doi.org/10.1109/led.2003.815000
Abstract
4H-silicon carbide (SiC) normally-off vertical junction field-effect transistor (JFET) is developed in a purely vertical configuration without internal lateral JFET gates. The 2.1-μm vertical p/sup +/n junction gates are created on the side walls of deep trenches by tilted aluminum (Al) implantation. Normally-off operation with blocking voltage V/sub bl/ of 1 726 V is demonstrated with an on-state current density of 300 A/cm 2 at a drain voltage of 3 V. The low specific on-resistance R/sub on-sp/ of 3.6 m/spl Omega/cm 2 gives the V/sub bl/ 2 /R/sub on-sp/ value of 830 MW/cm 2 , surpassing the past records of both unipolar and bipolar 4H-SiC power switches.Keywords
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