Ultraclean Technique for Silicon Wafer Surfaces with HNO3-HF Systems
- 1 November 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (11A), L2210
- https://doi.org/10.1143/jjap.27.l2210
Abstract
We have developed a wafer cleaning technique called the slight etch (SE) using an HNO3 and trace HF mixture. A 30 nm surface removal by the SE reduces the surface Fe concentration by one tenth, compared to conventional RCA and all measured elements below a concentration of 1010 cm-2, without roughness degradation. The ultraclean surface results in a significant improvement in the C-t retention time and defect density of SiO2. Since the etch selectivity of silicon for the oxide is more than 10, this cleaning is also ideal for wafers with patterned oxides.Keywords
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