Room Temperature Observation of Differential Negative Resistance in an AlAs/GaAs/AlAs Resonant Tunneling Diode
- 1 June 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (6A), L466
- https://doi.org/10.1143/jjap.24.l466
Abstract
A resonant tunneling diode having AlAs/GaAs/AlAs double barrier structure is designed to enhance the resonant tunneling current component and to suppress the excess current component which is believed to dominate the transport at high temperatures. Based on this design, a diode structure with optimized parameters is prepared by careful molecular beam epitaxial growth, in which the dopant incorporation into the well layer and the interface asperities are minimized. The AlAs/GaAs/AlAs diodes thus fabricated were found to exhibit differential negative resistance at room temperature for the first time.Keywords
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