Novel technique for SiO/sub 2/ formed by liquid-phase deposition for low-temperature processed polysilicon TFT
- 1 August 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 14 (8), 403-405
- https://doi.org/10.1109/55.225593
Abstract
A technique for SiO/sub 2/ formation by liquid-phase deposition (LPD) at nearly room temperature for low-temperature processed (LTP) polysilicon thin-film transistor (poly-Si TFT) was developed. LPD SiO/sub 2/ film with a lower P-etch rate shows a dense structure. LPD SiO/sub 2/ also exhibits good electrical characteristics. LTP poly-Si thin-film transistors (TFTs) with LPD SiO/sub 2/ as the gate insulator have been fabricated and investigated. Their characteristics indicate performance adequate for their use as pixel transistors in liquid crystal displays (LCDs).Keywords
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