0.66 μm room-temperature operation of InGaAlP DH laser diodes grown by MBE

1 January 1983

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 19 (5), 163-165
https://doi.org/10.1049/el:19830114

Abstract

Room-temperature pulsed operation of In0.49Ga0.31Al0.20P/In0.49Ga0.48Al0.03P/In0.49Ga0.31Al0.20P double heterostructure (DH) laser diodes has been achieved for the first time. The DH layers were grown by molecular beam epitaxy. The lasing wavelength was 0.66 μm and the threshold current density was 3.2−3.6 × 104 A/cm2 at room temperature.

Keywords

MBE
WAVELENGTH 0.66 MICRON
THRESHOLD CURRENT DENSITY
DOUBLE HETEROSTRUCTURE
MOLECULAR BEAM EPITAXY
ROOM-TEMPERATURE OPERATION
SEMICONDUCTOR LASERS
INGAALP DH LASER DIODES
SEMICONDUCTOR GROWTH
III-V SEMICONDUCTORS
PULSED OPERATION

This publication has 1 reference indexed in Scilit:

HETEROSTRUCTURE MATERIALS
Published by Elsevier BV ,1978

Cited by 32 articles