Perpendicular Hot Electron Spin-Valve Effect in a New Magnetic Field Sensor: The Spin-Valve Transistor

Abstract

A new magnetic field sensor is presented, based on perpendicular hot electron transport in a giant magnetoresistance (Co/Cu${)}_4$ multilayer, which serves as a base region of an $n$-silicon metal-base transistor structure. A 215% change in collector current is found in 500 Oe (77 K), with typical characteristics of the spin-valve effect. The in-plane magnetoresistance was only 3%. The transistor structure allows the investigation of energy resolved perpendicular transport properties, and in particular spin-dependent scattering of hot electrons in transition-metal as well as rare-earth-based multilayers.