Impurity Effects on the Dislocation Velocity in Gallium Arsenide
- 1 April 1972
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 32 (4), 1154
- https://doi.org/10.1143/jpsj.32.1154
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Dislocation velocities in indium antimonideActa Metallurgica, 1971
- Dislocation Velocity in Indium AntimonideJournal of the Physics Society Japan, 1968
- Change of Dislocation Velocity With Fermi Level in SiliconPhysical Review Letters, 1967
- Charged Impurity Effects on the Deformation of Dislocation-Free GermaniumPhysical Review B, 1966
- Theory of Dislocation Mobility in SemiconductorsPhysical Review B, 1963