cw helium-neon Raman laser
- 13 January 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (2), 86-88
- https://doi.org/10.1063/1.96943
Abstract
Continuous lasing has been observed at 650 nm with a helium-neon electrical discharge placed in an ultrahigh finesse optical cavity. This new lasing line is attributed to a Stokes–Raman process between the 1s5 and 1s4 electronic states of neon atoms pumped by the 632.8-nm neon lasing line. A gain calculation based on a near-resonant stimulated electronic Raman process predicts a lasing threshold for the 650-nm line near that measured. Lasing output power was measured as a function of discharge current and helium-neon gas pressure for the pump line and for the Stokes line.Keywords
This publication has 12 references indexed in Scilit:
- Up-conversion of excimer lasers via stimulated anti-Stokes Raman scatteringIEEE Journal of Quantum Electronics, 1984
- Anti-Stokes Raman laser emission at 149 nm in atomic bromineOptics Letters, 1983
- Generation of tunable infrared radiation by electronic stimulated Raman scattering in cesium vaporSoviet Journal of Quantum Electronics, 1982
- Efficient Raman conversion of XeF laser output in Ba vaporApplied Physics Letters, 1977
- Stimulated stokes emission with a dye laser: Intense tuneable radiation in the infraredOptics Communications, 1975
- Observation of Stimulated Anti-Stokes Raman Scattering in Inverted Atomic IodinePhysical Review Letters, 1974
- Transition Probabilities for the Prominent Red Lines of Ne IPhysical Review A, 1970
- Stimulated electronic Raman effect and parametric anti-Stokes radiation in potassium vaporIEEE Journal of Quantum Electronics, 1967
- Resonance Raman effect in free atoms of potassiumPhysics Letters A, 1967
- STIMULATED ELECTRONIC RAMAN SCATTERINGApplied Physics Letters, 1967