Time-resolved reflectivity characterization of polycrystalline low-temperature-grown GaAs
- 21 April 1999
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (17), 2462-2464
- https://doi.org/10.1063/1.123881
Abstract
Using femtosecond time resolved reflectivity, we have characterized the dynamics of photoinduced generated carriers in a polycrystalline low-temperature-grown GaAs sample. Our measurements are fitted with an analytical expression reliable for low pump power experiments. The sample, which presents no As precipitates, shows an ultrafast subpicosecond response together with a longer picosecond tail that we attribute to the midgap defect states. Moreover, we have observed the influence of surface roughness on the differential reflected signal.Keywords
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